Electrically-inactive phosphorus re-distribution during low temperature annealing
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Journal of Applied Physics ; 123 (2018), 16. - 161535. - ISSN 0021-8979. - eISSN 1089-7550
- Klassifikation
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Physik
- Ereignis
-
Veröffentlichung
- (wo)
-
Konstanz
- (wer)
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Bibliothek der Universität Konstanz
- (wann)
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2018
- Urheber
-
Peral, Ana
Youssef, Amanda
Dastgheib-Shirazi, Amir
Akey, Austin
Peters, Ian Marius
Hahn, Giso
Buonassisi, Tonio
Canizo, Carlos del
- URN
-
urn:nbn:de:bsz:352-2-1bo5a307q8llp7
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.0202, 13:53 MEZ
Datenpartner
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Beteiligte
- Peral, Ana
- Youssef, Amanda
- Dastgheib-Shirazi, Amir
- Akey, Austin
- Peters, Ian Marius
- Hahn, Giso
- Buonassisi, Tonio
- Canizo, Carlos del
- Bibliothek der Universität Konstanz
Entstanden
- 2018
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The corrosive effect of alkaline nickel-phosphorus plating on crystalline silicon
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Mapping of hydrogen bond energies in EFG silicon samples by analysis of spatially resolved minority charge carrier lifetimes after annealing steps
The Dissociation of Gallium-Hydrogen Pairs in Crystalline Silicon during Illuminated Annealing
Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells
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Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells
Automatic etch pit density analysis in multicrystalline silicon
Increased internal quantum efficiency of encapsulated solar cells by using two-component silicone as encapsulant material
Detection limit of XRF measurements at different synchrotron radiation facilities
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