Temperature‐Dependent Characteristics of AlN/Al 0.5 Ga 0.5 N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Temperature‐Dependent Characteristics of AlN/Al 0.5 Ga 0.5 N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts ; day:05 ; month:02 ; year:2024 ; extent:5
Physica status solidi / A. A, Applications and materials science ; (05.02.2024) (gesamt 5)

Creator: Maeda, Ryota
Ueno, Kohei
Kobayashi, Atsushi
Fujioka, Hiroshi

DOI: 10.1002/pssa.202300848

URN: urn:nbn:de:101:1-2024020514155572792010

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:20 AM CEST

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Maeda, Ryota
Ueno, Kohei
Kobayashi, Atsushi
Fujioka, Hiroshi

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Temperature‐Dependent Characteristics of AlN/Al 0.5 Ga 0.5 N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts

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Other Objects (12)

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