- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
1 Online-Ressource.
- Sprache
-
Englisch
- Erschienen in
-
Probing the tunable multi-cone band structure in Bernal bilayer graphene ; volume:15 ; number:1 ; day:11 ; month:4 ; year:2024 ; pages:1-9 ; date:12.2024
Nature Communications ; 15, Heft 1 (11.4.2024), 1-9, 12.2024
- Urheber
-
Seiler, Anna M.
Jacobsen, Nils
Statz, Martin
Fernandez, Noelia
Falorsi, Francesca
Watanabe, Kenji
Taniguchi, Takashi
Dong, Zhiyu
Levitov, Leonid S.
Weitz, R. Thomas
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1038/s41467-024-47342-0
- URN
-
urn:nbn:de:101:1-2406251031448.509203690516
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:51 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Seiler, Anna M.
- Jacobsen, Nils
- Statz, Martin
- Fernandez, Noelia
- Falorsi, Francesca
- Watanabe, Kenji
- Taniguchi, Takashi
- Dong, Zhiyu
- Levitov, Leonid S.
- Weitz, R. Thomas
- SpringerLink (Online service)
Ähnliche Objekte (12)
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene
Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene
Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene
Supercurrent mediated by helical edge modes in bilayer graphene
A ballistic graphene superconducting microwave circuit
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
MoS2 photodetectors integrated with photonic circuits
Insulating State in Low‐Disorder Graphene Nanoribbons
Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene
Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene
Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene
Supercurrent mediated by helical edge modes in bilayer graphene
A ballistic graphene superconducting microwave circuit
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
MoS2 photodetectors integrated with photonic circuits
Insulating State in Low‐Disorder Graphene Nanoribbons
Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene
Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene
Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene
Supercurrent mediated by helical edge modes in bilayer graphene
A ballistic graphene superconducting microwave circuit
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
MoS2 photodetectors integrated with photonic circuits
Insulating State in Low‐Disorder Graphene Nanoribbons