Electrically induced insulator-to-metal transition in InP-based ion-gated transistor
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Electrically induced insulator-to-metal transition in InP-based ion-gated transistor ; volume:14 ; number:1 ; day:5 ; month:12 ; year:2024 ; pages:1-7 ; date:12.2024
Scientific reports ; 14, Heft 1 (5.12.2024), 1-7, 12.2024
- Klassifikation
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Elektrotechnik, Elektronik
- Urheber
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Shimizu, Sunao
Shioya, Hiroki
Hatano, Takafumi
Miwa, Kazumoto
Oiwa, Akira
Ono, Shimpei
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s41598-024-81685-4
- URN
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urn:nbn:de:101:1-2502192107121.151534264449
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:28 MESZ
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Beteiligte
- Shimizu, Sunao
- Shioya, Hiroki
- Hatano, Takafumi
- Miwa, Kazumoto
- Oiwa, Akira
- Ono, Shimpei
- SpringerLink (Online service)
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