A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate‐Tunable Rectification Ability
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate‐Tunable Rectification Ability ; day:28 ; month:12 ; year:2023 ; extent:8
Advanced electronic materials ; (28.12.2023) (gesamt 8)
- Creator
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Wang, Heng
Chen, Maolin
Yang, Yiming
Ma, Yinchang
Luo, Linqu
Liu, Chen
Getmanov, Igor
Anthopoulos, Thomas D.
Zhang, Xixiang
Shamim, Atif
- DOI
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10.1002/aelm.202300695
- URN
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urn:nbn:de:101:1-2023122914235905458160
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:32 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Wang, Heng
- Chen, Maolin
- Yang, Yiming
- Ma, Yinchang
- Luo, Linqu
- Liu, Chen
- Getmanov, Igor
- Anthopoulos, Thomas D.
- Zhang, Xixiang
- Shamim, Atif