A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate‐Tunable Rectification Ability

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate‐Tunable Rectification Ability ; day:28 ; month:12 ; year:2023 ; extent:8
Advanced electronic materials ; (28.12.2023) (gesamt 8)

Creator
Wang, Heng
Chen, Maolin
Yang, Yiming
Ma, Yinchang
Luo, Linqu
Liu, Chen
Getmanov, Igor
Anthopoulos, Thomas D.
Zhang, Xixiang
Shamim, Atif

DOI
10.1002/aelm.202300695
URN
urn:nbn:de:101:1-2023122914235905458160
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:32 AM CEST

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Associated

  • Wang, Heng
  • Chen, Maolin
  • Yang, Yiming
  • Ma, Yinchang
  • Luo, Linqu
  • Liu, Chen
  • Getmanov, Igor
  • Anthopoulos, Thomas D.
  • Zhang, Xixiang
  • Shamim, Atif

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