The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms ; volume:214 ; number:7 ; year:2017 ; extent:6
Physica status solidi / A. A, Applications and materials science ; 214, Heft 7 (2017) (gesamt 6)
- Creator
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Gusakov, Vasilii E.
Lastovskii, Stanislau B.
Murin, Leonid I.
Tolkacheva, Ekaterina A.
Khirunenko, Lyudmila I.
Sosnin, Mikhail G.
Duvanskii, Andrei V.
Markevich, Vladimir P.
Halsall, Matthew P.
Peaker, Anthony R.
Kolevatov, Ilia
Ayedh, Hussein M.
Monakhov, Edouard V.
Svensson, Bengt G.
- DOI
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10.1002/pssa.201700261
- URN
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urn:nbn:de:101:1-2022093008332656599359
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:33 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Gusakov, Vasilii E.
- Lastovskii, Stanislau B.
- Murin, Leonid I.
- Tolkacheva, Ekaterina A.
- Khirunenko, Lyudmila I.
- Sosnin, Mikhail G.
- Duvanskii, Andrei V.
- Markevich, Vladimir P.
- Halsall, Matthew P.
- Peaker, Anthony R.
- Kolevatov, Ilia
- Ayedh, Hussein M.
- Monakhov, Edouard V.
- Svensson, Bengt G.
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