Ferroelectric Hf 0.5 Zr 0.5 O 2 for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Ferroelectric Hf 0.5 Zr 0.5 O 2 for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures ; day:06 ; month:05 ; year:2024 ; extent:14
Advanced electronic materials ; (06.05.2024) (gesamt 14)
- Creator
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Bohuslavskyi, Heorhii
Grigoras, Kestutis
Ribeiro, Mário
Prunnila, Mika
Majumdar, Sayani
- DOI
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10.1002/aelm.202300879
- URN
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urn:nbn:de:101:1-2405071418190.329075269296
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:50 AM CEST
Data provider
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Associated
- Bohuslavskyi, Heorhii
- Grigoras, Kestutis
- Ribeiro, Mário
- Prunnila, Mika
- Majumdar, Sayani
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