Electronic grain boundary properties in polycrystalline Cu(In,Ga)SE 2 semiconductors for thin film solar cells
- Alternative title
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Cu(In,Ga)Se2
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
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30 cm
- Extent
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VII, 125 S.
- Language
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Englisch
- Notes
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Ill., graph. Darst.
Zugl.: Berlin, Freie Univ., Diss., 2012
- Bibliographic citation
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Schriftenreihe des HZB / Helmholtz-Zentrum Berlin für Materialien und Energie ; 34
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 2:06 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Baier, Robert
- HZB
Time of origin
- 2012
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Grain-boundary-induced melting in quenched polycrystalline monolayers
Microstructure and grain boundary evolution in titanium thin films
Grain size control in polycrystalline colloidal solids
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