Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf₀.₅Zr₀.₅O₂
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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In: New York ; NY : IEEE, IEEE International Electron Devices Meeting (IEDM). San Francisco, 01.-05. Dez. 2018
- Event
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Veröffentlichung
- (where)
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Dresden
- (who)
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Technische Universität Dresden
- (when)
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2021
- Creator
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Hoffmann, M.
Max, B.
Mittmann, T.
Schroeder, U.
Slesazeck, S.
Mikolajick, T.
- URN
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urn:nbn:de:bsz:14-qucosa2-769141
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:27 AM CEST
Data provider
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Associated
- Hoffmann, M.
- Max, B.
- Mittmann, T.
- Schroeder, U.
- Slesazeck, S.
- Mikolajick, T.
- Technische Universität Dresden
Time of origin
- 2021
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Domain Formation in Ferroelectric Negative Capacitance Devices
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On the stabilization of ferroelectric negative capacitance in nanoscale devices
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Harnessing ferroelectric domains for negative capacitance
Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation
Domain Formation in Ferroelectric Negative Capacitance Devices
Negative capacitance from the inductance of ferroelectric switching
Hochgeschwindigkeitsbearbeitung : = High-speed machining
High-speed pulse techniques
High-Speed Conveying System
High-speed hyperspectral imaging of ferroelectric domain walls using broadband coherent anti-Stokes Raman scattering
On the stabilization of ferroelectric negative capacitance in nanoscale devices
Dynamics of high-speed VCSELs