Defect Passivation of 2D Semiconductors by Fixating Chemisorbed Oxygen Molecules via h ‐BN Encapsulations

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Defect Passivation of 2D Semiconductors by Fixating Chemisorbed Oxygen Molecules via h ‐BN Encapsulations ; day:17 ; month:03 ; year:2024 ; extent:10
Advanced science ; (17.03.2024) (gesamt 10)

Creator: Jung, Jin‐Woo
Choi, Hyeon‐Seo
Lee, Young‐Jun
Kim, Youngjae
Taniguchi, Takashi
Watanabe, Kenji
Choi, Min‐Yeong
Jang, Jae Hyuck
Chung, Hee‐Suk
Kim, Dohun
Kim, Youngwook
Cho, Chang‐Hee

DOI: 10.1002/advs.202310197

URN: urn:nbn:de:101:1-2024031713042681483344

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:51 AM CEST

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Associated

Jung, Jin‐Woo
Choi, Hyeon‐Seo
Lee, Young‐Jun
Kim, Youngjae
Taniguchi, Takashi
Watanabe, Kenji
Choi, Min‐Yeong
Jang, Jae Hyuck
Chung, Hee‐Suk
Kim, Dohun
Kim, Youngwook
Cho, Chang‐Hee

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Defect Passivation of 2D Semiconductors by Fixating Chemisorbed Oxygen Molecules via h ‐BN Encapsulations

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Other Objects (12)

From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices

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Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors

High‐Speed Electroluminescence Modulation in Monolayer WS 2

Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure

A ballistic graphene superconducting microwave circuit

MoS2 photodetectors integrated with photonic circuits

Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor

Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets

Insulating State in Low‐Disorder Graphene Nanoribbons

Author Correction: Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure

hBN‐Encapsulated Graphene Coupled to a Plasmonic Metasurface via 1D Electrodes for Photodetection Applications

From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices

Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions

Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors

High‐Speed Electroluminescence Modulation in Monolayer WS 2

Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure

A ballistic graphene superconducting microwave circuit

MoS2 photodetectors integrated with photonic circuits

Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor

Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets

Insulating State in Low‐Disorder Graphene Nanoribbons

Author Correction: Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure

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From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices

Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions

Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors

High‐Speed Electroluminescence Modulation in Monolayer WS 2

Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure

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hBN‐Encapsulated Graphene Coupled to a Plasmonic Metasurface via 1D Electrodes for Photodetection Applications

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