Spatially Distributed Ramp Reversal Memory in VO 2 (Adv. Electron. Mater. 10/2023)

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Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Spatially Distributed Ramp Reversal Memory in VO 2 (Adv. Electron. Mater. 10/2023) ; volume:9 ; number:10 ; year:2023 ; extent:1
Advanced electronic materials ; 9, Heft 10 (2023) (gesamt 1)

Creator
Basak, Sayan
Sun, Yuxin
Banguero, Melissa Alzate
Salev, Pavel
Schuller, Ivan K.
Aigouy, Lionel
Carlson, Erica W.
Zimmers, Alexandre

DOI
10.1002/aelm.202370046
URN
urn:nbn:de:101:1-2023101015224871627407
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:46 AM CEST

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Associated

  • Basak, Sayan
  • Sun, Yuxin
  • Banguero, Melissa Alzate
  • Salev, Pavel
  • Schuller, Ivan K.
  • Aigouy, Lionel
  • Carlson, Erica W.
  • Zimmers, Alexandre

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