Spin injection and magnetoresistance in MoS2-based tunnel junctions using Fe3Si Heusler alloy electrodes
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
2045-2322
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Spin injection and magnetoresistance in MoS2-based tunnel junctions using Fe3Si Heusler alloy electrodes ; volume:8 ; number:1 ; day:19 ; month:3 ; year:2018 ; pages:1-8 ; date:12.2018
Scientific reports ; 8, Heft 1 (19.3.2018), 1-8, 12.2018
- Klassifikation
-
Physik
- Urheber
-
Rotjanapittayakul, Worasak
- Beteiligte Personen und Organisationen
-
Pijitrojana, Wanchai
Archer, Thomas
Sanvito, Stefano
Prasongkit, Jariyanee
SpringerLink (Online service)
- DOI
-
10.1038/s41598-018-22910-9
- URN
-
urn:nbn:de:1111-20180517416
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 11:02 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Rotjanapittayakul, Worasak
- Pijitrojana, Wanchai
- Archer, Thomas
- Sanvito, Stefano
- Prasongkit, Jariyanee
- SpringerLink (Online service)
Ähnliche Objekte (12)
Large Magnetoresistance in Single-Radical Molecular Junctions
FeGa based tunneling magnetoresistance junctions and strain sensors
FeGa based tunneling magnetoresistance junctions and strain sensors
Magnetic tunneling junctions with the Heusler compound Co2Cr0.6Fe0.4Al
Cobalt-based Heusler compounds in magnetic tunnel junctions
XPS and transport studies of oxide barriers in tunnel magnetoresistance junctions
XPS and transport studies of oxide barriers in tunnel magnetoresistance junctions
Magnetoresistance of atomic-size contacts realized with mechanically controllable break junctions
Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
Colossal negative magnetoresistance in field-induced Weyl semimetal of magnetic half-Heusler compound
Barium Oxide as novel barrier in Heusler based magnetic tunnel junctions
Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance
Large Magnetoresistance in Single-Radical Molecular Junctions
FeGa based tunneling magnetoresistance junctions and strain sensors
FeGa based tunneling magnetoresistance junctions and strain sensors
Magnetic tunneling junctions with the Heusler compound Co2Cr0.6Fe0.4Al
Cobalt-based Heusler compounds in magnetic tunnel junctions
XPS and transport studies of oxide barriers in tunnel magnetoresistance junctions
XPS and transport studies of oxide barriers in tunnel magnetoresistance junctions
Magnetoresistance of atomic-size contacts realized with mechanically controllable break junctions
Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
Colossal negative magnetoresistance in field-induced Weyl semimetal of magnetic half-Heusler compound
Barium Oxide as novel barrier in Heusler based magnetic tunnel junctions
Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance
Large Magnetoresistance in Single-Radical Molecular Junctions
FeGa based tunneling magnetoresistance junctions and strain sensors
FeGa based tunneling magnetoresistance junctions and strain sensors
Magnetic tunneling junctions with the Heusler compound Co2Cr0.6Fe0.4Al
Cobalt-based Heusler compounds in magnetic tunnel junctions
XPS and transport studies of oxide barriers in tunnel magnetoresistance junctions
XPS and transport studies of oxide barriers in tunnel magnetoresistance junctions
Magnetoresistance of atomic-size contacts realized with mechanically controllable break junctions
Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
Colossal negative magnetoresistance in field-induced Weyl semimetal of magnetic half-Heusler compound
Barium Oxide as novel barrier in Heusler based magnetic tunnel junctions