Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

Abstract: The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies. Ferroelectric memories, such as Ferroelectric Random Access Memories (FeRAM) and the Ferroelectric Field Effect Transistor (FeFET), combine non‐volatility with high‐speed operation and low power consumption, though they contend with specific challenges, including variability and endurance limitations. Meanwhile, piezoelectric and pyroelectric sensors/actuators exploit the capability of ferroelectric materials to interconvert mechanical or thermal energy with electrical signals. These sensors demonstrate exceptional sensitivity, though factors such as material fatigue and temperature stability can impact their performance. Additionally, radio frequency devices, particularly varactors, utilize ferroelectric materials to enable tunable capacitance, enhancing dynamic control. This review assesses the advantages and current challenges across these technologies, offering insights into prospective solutions.

Angaben zum Objekt

• Standort: Deutsche Nationalbibliothek Frankfurt am Main
• Umfang: Online-Ressource
• Sprache: Englisch

Verweise und Beziehungen

• Erschienen in: Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems ; day:26 ; month:02 ; year:2025 ; extent:19 ; Advanced electronic materials ; (26.02.2025) (gesamt 19)

Beteiligte, Orts- und Zeitangaben

• Urheber: Lehninger, David ; Müller, Franz ; Raffel, Yannick ; Yang, Shouzhuo ; Neuber, Markus ; Abdulazhanov, Sukhrob ; Kämpfe, Thomas ; Seidel, Konrad ; Lederer, Maximilian

Weitere Informationen

• DOI: 10.1002/aelm.202400686
• URN: urn:nbn:de:101:1-2502271339155.317216839468
• Rechteinformation: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Letzte Aktualisierung: 15.08.2025, 07:25 MESZ