Investigation of nitrogen enriched silicon for particle detectors

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Abstract: This article explores the viability of nitrogen enriched silicon for particle physics application. For that purpose silicon diodes and strip sensors were produced using high resistivity float zone silicon, diffusion oxygenated float zone silicon, nitrogen enriched float zone silicon and magnetic Czochralski silicon. The article features comparative studies using secondary ion mass spectrometry, electrical characterization, edge transient current technique, source and thermally stimulated current spectroscopy measurements on sensors that were irradiated up to a fluence of 1015 neq/cm2. Irradiations were performed with 23 MeV protons at the facilities in Karlsruhe (KIT), with 24 GeV/c protons at CERN (PS-IRRAD) and neutrons at the research reactor in Ljubljana. Secondary ion mass spectrometry measurements give evidence for nitrogen loss after processing, which makes gaining from nitrogen enrichment difficult

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch
Anmerkungen
Journal of instrumentation. - 15 (2020) , P05006, ISSN: 1748-0221

Ereignis
Veröffentlichung
(wo)
Freiburg
(wer)
Universität
(wann)
2020
Urheber
Beteiligte Personen und Organisationen
Experimentelle Teilchenphysik, Abt. Prof. Karl Jakobs

DOI
10.1088/1748-0221/15/05/p05006
URN
urn:nbn:de:bsz:25-freidok-1726674
Rechteinformation
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
25.03.2025, 13:46 MEZ

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