Alkoxysilane‐Treated SnO 2 Interlayer for Energy Band Alignment of SnO 2 Electron Injection Layer in Inverted Perovskite Light‐Emitting Diodes

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Alkoxysilane‐Treated SnO 2 Interlayer for Energy Band Alignment of SnO 2 Electron Injection Layer in Inverted Perovskite Light‐Emitting Diodes ; day:04 ; month:04 ; year:2024 ; extent:8
Advanced materials interfaces ; (04.04.2024) (gesamt 8)

Creator
Kim, Yu Jin
Kim, Bong Woo
Im, Sang Hyuk

DOI
10.1002/admi.202400020
URN
urn:nbn:de:101:1-2024040414374325076597
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 11:02 AM CEST

Data provider

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Associated

  • Kim, Yu Jin
  • Kim, Bong Woo
  • Im, Sang Hyuk

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