Electrons and holes in InSb under crossed magnetic and stress fields. 1, Theory
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: Physical review, B 37 (1988), S. 10249-10255. URL http://dx.doi.org/10.1103/PhysRevB.37.10264
- Classification
-
Physik
- Keyword
-
Halbleiter ; Magnetfeld ; Valenzband
- Event
-
Veröffentlichung
- (where)
-
Stuttgart
- (who)
-
Universitätsbibliothek der Universität Stuttgart
- (when)
-
2016
- Contributor
- URN
-
urn:nbn:de:bsz:93-opus-104820
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:54 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Trebin, Hans-Rainer
- Wolfstädter, Bernd
- Pascher, Harald
- Häfele, Hans-Georg
- Universitätsbibliothek der Universität Stuttgart
Time of origin
- 2016
Other Objects (12)
Electrons and holes in InSb under crossed magnetic and stress fields. 3, Magnetoreflection
Electrons and holes in InSb under crossed magnetic and stress fields. 2, Recombination radiation
Electrons and holes in InSb under crossed magnetic and stress fields. 4, Stimulated Raman scattering in the valence bands
Hard and soft electrons and holes
Transitions of electrons and holes drive diffusion in crystals, glasses and melts
Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe
Measurements of the drift velocities of electrons and holes in high-ohmic <100> silicon
Molecules, Electrons and Biology
Electrons and the Vacuum
Atoms, electrons, and rays
CROSSED
Interacting electrons and quantum magnetism
Electrons and holes in InSb under crossed magnetic and stress fields. 3, Magnetoreflection
Electrons and holes in InSb under crossed magnetic and stress fields. 2, Recombination radiation
Electrons and holes in InSb under crossed magnetic and stress fields. 4, Stimulated Raman scattering in the valence bands
Hard and soft electrons and holes
Transitions of electrons and holes drive diffusion in crystals, glasses and melts
Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe
Measurements of the drift velocities of electrons and holes in high-ohmic <100> silicon
Molecules, Electrons and Biology
Electrons and the Vacuum
Atoms, electrons, and rays
CROSSED
Interacting electrons and quantum magnetism
Electrons and holes in InSb under crossed magnetic and stress fields. 3, Magnetoreflection
Electrons and holes in InSb under crossed magnetic and stress fields. 2, Recombination radiation
Electrons and holes in InSb under crossed magnetic and stress fields. 4, Stimulated Raman scattering in the valence bands
Hard and soft electrons and holes
Transitions of electrons and holes drive diffusion in crystals, glasses and melts
Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe
Measurements of the drift velocities of electrons and holes in high-ohmic <100> silicon
Molecules, Electrons and Biology
Electrons and the Vacuum
Atoms, electrons, and rays
CROSSED