Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature ; day:02 ; month:07 ; year:2024 ; extent:10
Advanced electronic materials ; (02.07.2024) (gesamt 10)
- Urheber
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Myronov, Maksym
Jahandar, Pedram
Rossi, Simone
Sewell, Kevin
Murphy‐Armando, Felipe
Pezzoli, Fabio
- DOI
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10.1002/aelm.202300811
- URN
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urn:nbn:de:101:1-2407021423268.981820589477
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:56 MESZ
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Beteiligte
- Myronov, Maksym
- Jahandar, Pedram
- Rossi, Simone
- Sewell, Kevin
- Murphy‐Armando, Felipe
- Pezzoli, Fabio
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