On the mechanism of electroluminescence emission by porous silicon layers

Abstract: The analytical treatment of a model considering the electrooxidation of p-porous silicon layers under galvanostatic conditions is able to give account of experimental facts such as the shape and location of the electroluminescence peak as well as of the spectral shift of the electroluminescence peak produced by oxidation. The proposed model considers electroluminescence to be the result of electron injection into the conduction band by an adsorbed intermediate produced by electrooxidation of the surface coverage with hydrogen or siloxene of the silicon nanocrystallites. The access of holes to the surface is made possible by low accumulation layer conditions and is the rate determining step in the electroluminescence mechanism. In this way it is possible to give a satisfactory explanation to the shift towards the blue experimented by the electroluminiscence emission maximum as a consequence of electrooxidation.

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
On the mechanism of electroluminescence emission by porous silicon layers ; volume:3 ; number:3 ; year:2005 ; pages:470-481 ; extent:12
Open chemistry ; 3, Heft 3 (2005), 470-481 (gesamt 12)

Creator
Velasco, Jaime

DOI
10.2478/BF02479276
URN
urn:nbn:de:101:1-2410171637231.656648194909
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:39 AM CEST

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Associated

  • Velasco, Jaime

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