Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps ; day:21 ; month:07 ; year:2021 ; extent:12
Physica status solidi / A. A, Applications and materials science ; (21.07.2021) (gesamt 12)
- Urheber
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De Guzman, Joyce Ann T.
Markevich, Vladimir P.
Hawkins, Ian D.
Ayedh, Hussein M.
Coutinho, José
Binns, Jeff
Falster, Robert
Abrosimov, Nikolay V.
Crowe, Iain F.
Halsall, Matthew P.
Peaker, Anthony R.
- DOI
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10.1002/pssa.202100108
- URN
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urn:nbn:de:101:1-2021072115221217684227
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:51 MESZ
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Beteiligte
- De Guzman, Joyce Ann T.
- Markevich, Vladimir P.
- Hawkins, Ian D.
- Ayedh, Hussein M.
- Coutinho, José
- Binns, Jeff
- Falster, Robert
- Abrosimov, Nikolay V.
- Crowe, Iain F.
- Halsall, Matthew P.
- Peaker, Anthony R.
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