Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps ; day:21 ; month:07 ; year:2021 ; extent:12
Physica status solidi / A. A, Applications and materials science ; (21.07.2021) (gesamt 12)

Creator
De Guzman, Joyce Ann T.
Markevich, Vladimir P.
Hawkins, Ian D.
Ayedh, Hussein M.
Coutinho, José
Binns, Jeff
Falster, Robert
Abrosimov, Nikolay V.
Crowe, Iain F.
Halsall, Matthew P.
Peaker, Anthony R.

DOI
10.1002/pssa.202100108
URN
urn:nbn:de:101:1-2021072115221217684227
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:51 AM CEST

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Associated

  • De Guzman, Joyce Ann T.
  • Markevich, Vladimir P.
  • Hawkins, Ian D.
  • Ayedh, Hussein M.
  • Coutinho, José
  • Binns, Jeff
  • Falster, Robert
  • Abrosimov, Nikolay V.
  • Crowe, Iain F.
  • Halsall, Matthew P.
  • Peaker, Anthony R.

Other Objects (12)