Hochschulschrift
Fabrication and characterization of AIGaN/GaN high electron mobility transistors
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Maße
-
30 cm
- Umfang
-
122 Bl.
- Sprache
-
Englisch
- Anmerkungen
-
graph. Darst.
Aachen, Techn. Hochsch., Diss., 2004 (Nicht für den Austausch)
- Klassifikation
-
Ingenieurwissenschaften und Maschinenbau
- Schlagwort
-
HEMT
Heterostruktur-Bauelement
Aluminiumnitrid
Galliumnitrid
Substrat
Saphir
HEMT
Heterostruktur-Bauelement
Aluminiumnitrid
Galliumnitrid
Substrat
Silicium
- Urheber
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
- 11.06.2025, 13:32 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek.
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Objekttyp
- Hochschulschrift
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