- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Pressure‐Tuneable Visible‐Range Band Gap in the Ionic Spinel Tin Nitride ; volume:130 ; number:36 ; year:2018 ; pages:11797-11802 ; extent:6
Angewandte Chemie ; 130, Heft 36 (2018), 11797-11802 (gesamt 6)
- Creator
-
Kearney, John S. C.
Graužinytė, Miglė
Smith, Dean
Sneed, Daniel
Childs, Christian
Hinton, Jasmine
Park, Changyong
Smith, Jesse S.
Kim, Eunja
Fitch, Samuel D. S.
Hector, Andrew L.
Pickard, Chris J.
Flores‐Livas, José A.
Salamat, Ashkan
- DOI
-
10.1002/ange.201805038
- URN
-
urn:nbn:de:101:1-2022090606115730815924
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:29 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Kearney, John S. C.
- Graužinytė, Miglė
- Smith, Dean
- Sneed, Daniel
- Childs, Christian
- Hinton, Jasmine
- Park, Changyong
- Smith, Jesse S.
- Kim, Eunja
- Fitch, Samuel D. S.
- Hector, Andrew L.
- Pickard, Chris J.
- Flores‐Livas, José A.
- Salamat, Ashkan
Other Objects (12)
Pressure‐Tuneable Visible‐Range Band Gap in the Ionic Spinel Tin Nitride
Electrical properties of zinc nitride and zinc tin nitride semiconductor thin films toward photovoltaic applications
Nitride Spinel: An Ultraincompressible High‐Pressure Form of BeP 2 N 4
Nitride Spinel: An Ultraincompressible High‐Pressure Form of BeP 2 N 4
Zirconium Nitride for Plasmonic Cloaking of Visible Nanowire Photodetectors
Silicon Rich Nitride Huygens Metasurfaces in the Visible Regime
Spinel. (roher)
Tuneable electron transport in metallic nanostructures
Facile Synthesis of Tuneable Azophosphonium Salts
Synthesis of Tin Nitride Sn x N y Nanowires by Chemical Vapour Deposition
Rin-tin-tin
Rin Tin Tin
Pressure‐Tuneable Visible‐Range Band Gap in the Ionic Spinel Tin Nitride
Electrical properties of zinc nitride and zinc tin nitride semiconductor thin films toward photovoltaic applications
Nitride Spinel: An Ultraincompressible High‐Pressure Form of BeP 2 N 4
Nitride Spinel: An Ultraincompressible High‐Pressure Form of BeP 2 N 4
Zirconium Nitride for Plasmonic Cloaking of Visible Nanowire Photodetectors
Silicon Rich Nitride Huygens Metasurfaces in the Visible Regime
Spinel. (roher)
Tuneable electron transport in metallic nanostructures
Facile Synthesis of Tuneable Azophosphonium Salts
Synthesis of Tin Nitride Sn x N y Nanowires by Chemical Vapour Deposition
Rin-tin-tin
Rin Tin Tin
Pressure‐Tuneable Visible‐Range Band Gap in the Ionic Spinel Tin Nitride
Electrical properties of zinc nitride and zinc tin nitride semiconductor thin films toward photovoltaic applications
Nitride Spinel: An Ultraincompressible High‐Pressure Form of BeP 2 N 4
Nitride Spinel: An Ultraincompressible High‐Pressure Form of BeP 2 N 4
Zirconium Nitride for Plasmonic Cloaking of Visible Nanowire Photodetectors
Silicon Rich Nitride Huygens Metasurfaces in the Visible Regime
Spinel. (roher)
Tuneable electron transport in metallic nanostructures
Facile Synthesis of Tuneable Azophosphonium Salts
Synthesis of Tin Nitride Sn x N y Nanowires by Chemical Vapour Deposition
Rin-tin-tin