RETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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RETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface ; volume:9 ; number:1 ; day:17 ; month:6 ; year:2013 ; pages:1-8 ; date:12.2014
Nanoscale research letters ; 9, Heft 1 (17.6.2013), 1-8, 12.2014
- Creator
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Prakash, Amit
Maikap, Siddheswar
Chiu, Hsien-Chin
Tien, Ta-Chang
Lai, Chao-Sung
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/1556-276X-9-152
- URN
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urn:nbn:de:101:1-2019020323142710148049
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:56 AM CEST
Data provider
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Associated
- Prakash, Amit
- Maikap, Siddheswar
- Chiu, Hsien-Chin
- Tien, Ta-Chang
- Lai, Chao-Sung
- SpringerLink (Online service)
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Protons: Critical Species for Resistive Switching in Interface‐Type Memristors
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching
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Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation
Germanium sulphide based resistive switching devices
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Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
Non-standard switching phenomena and interface effects in resistive switching devices
Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Retraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
Protons: Critical Species for Resistive Switching in Interface‐Type Memristors
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching
Filament Dynamics in Resistive Switching
Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation
Germanium sulphide based resistive switching devices
Resistive Switching Systems: A Spectromicroscopy Approach