RETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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RETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface ; volume:9 ; number:1 ; day:17 ; month:6 ; year:2013 ; pages:1-8 ; date:12.2014
Nanoscale research letters ; 9, Heft 1 (17.6.2013), 1-8, 12.2014
- Urheber
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Prakash, Amit
Maikap, Siddheswar
Chiu, Hsien-Chin
Tien, Ta-Chang
Lai, Chao-Sung
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1186/1556-276X-9-152
- URN
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urn:nbn:de:101:1-2019020323142710148049
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:56 MESZ
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Beteiligte
- Prakash, Amit
- Maikap, Siddheswar
- Chiu, Hsien-Chin
- Tien, Ta-Chang
- Lai, Chao-Sung
- SpringerLink (Online service)
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Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
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