Local gate control of Mott metal-insulator transition in a 2D metal-organic framework
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Local gate control of Mott metal-insulator transition in a 2D metal-organic framework ; volume:15 ; number:1 ; day:26 ; month:4 ; year:2024 ; pages:1-9 ; date:12.2024
Nature Communications ; 15, Heft 1 (26.4.2024), 1-9, 12.2024
- Urheber
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Lowe, Benjamin
Field, Bernard
Hellerstedt, Jack
Ceddia, Julian
Nourse, Henry L.
Powell, Ben J.
Medhekar, Nikhil V.
Schiffrin, Agustin
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s41467-024-47766-8
- URN
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urn:nbn:de:101:1-2407092114100.981020008033
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 11:01 MESZ
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Beteiligte
- Lowe, Benjamin
- Field, Bernard
- Hellerstedt, Jack
- Ceddia, Julian
- Nourse, Henry L.
- Powell, Ben J.
- Medhekar, Nikhil V.
- Schiffrin, Agustin
- SpringerLink (Online service)
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