Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Bibliographic citation: Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography ; volume:7 ; pages:1461-1470
Beilstein journal of nanotechnology ; 7, 1461-1470

Classification: Ingenieurwissenschaften und Maschinenbau

DOI: 10.3762/bjnano.7.138

URN: urn:nbn:de:101:1-201701181845

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:52 AM CEST

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Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

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Other Objects (12)

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