Electrically tunable metasurface by using InAs in a metal–insulator–metal configuration

Abstract: The ability of modulating optical properties at a lateral subwavelength scale is of crucial importance due to its potential applications for wide-angle holographic displays, optical communications, and interferometric sensors. Here, we present an electrically tunable metasurface whose optical properties can be element-wise controlled at the lateral subwavelength scale in the mid-infrared wavelength regime. Our proposed device facilitates an n-doped InAs layer as a dynamic-tunable layer, and the charge carrier concentration inside the InAs layer is tailored by external gate biases. This InAs active layer is sandwiched between top aluminum strip antennas and a bottom gold substrate, forming the metal–insulator–metal configuration. The change of the charge carrier concentration gives rise to modulation of the amplitude and phase of reflected light in a mid-infrared regime. Numerical investigations show the reflectivity contrast of 44%P with biases of −2.5–0 V and the phase change of 236° with biases of −15 V to +15 V at the wavelength of ∼5 μm. Versatile wavefront shaping such as beam focusing with Fresnel Zone plate and beam steering with saw-tooth phase grating is also provided.

Object Details

• Location: Deutsche Nationalbibliothek Frankfurt am Main
• Extent: Online-Ressource
• Language: Englisch

References and Relationships

• Bibliographic citation: Electrically tunable metasurface by using InAs in a metal–insulator–metal configuration ; volume:11 ; number:6 ; year:2022 ; pages:1117-1126 ; extent:10 ; Nanophotonics ; 11, Heft 6 (2022), 1117-1126 (gesamt 10)

Contributors, Places and Time

• Creator: Park, Junghyun ; Kim, Seong Jun ; Sorger, Volker J. ; Kim, Soo Jin

Further information

• DOI: 10.1515/nanoph-2021-0618
• URN: urn:nbn:de:101:1-2022120813242045944109
• Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Last update: 15.08.2025, 7:37 AM CEST