- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
-
Topological flat bands in a family of multilayer graphene moiré lattices ; volume:15 ; number:1 ; day:4 ; month:12 ; year:2024 ; pages:1-9 ; date:12.2024
Nature Communications ; 15, Heft 1 (4.12.2024), 1-9, 12.2024
- Classification
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Sozialwissenschaften, Soziologie, Anthropologie
- Creator
-
Waters, Dacen
Su, Ruiheng
Thompson, Ellis
Okounkova, Anna
Arreguin-Martinez, Esmeralda
He, Minhao
Hinds, Katherine
Watanabe, Kenji
Taniguchi, Takashi
Xu, Xiaodong
Zhang, Ya-Hui
Folk, Joshua
Yankowitz, Matthew
- Contributor
-
SpringerLink (Online service)
- DOI
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10.1038/s41467-024-55001-7
- URN
-
urn:nbn:de:101:1-2502182115071.141246140434
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:33 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Waters, Dacen
- Su, Ruiheng
- Thompson, Ellis
- Okounkova, Anna
- Arreguin-Martinez, Esmeralda
- He, Minhao
- Hinds, Katherine
- Watanabe, Kenji
- Taniguchi, Takashi
- Xu, Xiaodong
- Zhang, Ya-Hui
- Folk, Joshua
- Yankowitz, Matthew
- SpringerLink (Online service)
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Quantum coherence and interference of a single moiré exciton in nano-fabricated twisted monolayer semiconductor heterobilayers
Dielectric catastrophe at the Wigner-Mott transition in a moiré superlattice
Robust flat bands in twisted trilayer graphene moiré quasicrystals
Layer-polarized ferromagnetism in rhombohedral multilayer graphene
Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene
A ballistic graphene superconducting microwave circuit
MoS2 photodetectors integrated with photonic circuits
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene
Quantum coherence and interference of a single moiré exciton in nano-fabricated twisted monolayer semiconductor heterobilayers
Dielectric catastrophe at the Wigner-Mott transition in a moiré superlattice
Robust flat bands in twisted trilayer graphene moiré quasicrystals
Layer-polarized ferromagnetism in rhombohedral multilayer graphene
Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene
A ballistic graphene superconducting microwave circuit
MoS2 photodetectors integrated with photonic circuits
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene
Quantum coherence and interference of a single moiré exciton in nano-fabricated twisted monolayer semiconductor heterobilayers
Dielectric catastrophe at the Wigner-Mott transition in a moiré superlattice
Robust flat bands in twisted trilayer graphene moiré quasicrystals
Layer-polarized ferromagnetism in rhombohedral multilayer graphene
Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene
A ballistic graphene superconducting microwave circuit
MoS2 photodetectors integrated with photonic circuits
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices