Hochschulschrift
Heterojunction solar cells (a-Si, c-Si) : investigations on PECV deposited hydrogenated silicon alloys for use as high quality surface passivation and emitter, BSF
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
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9783832522919
- Dimensions
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21 cm
- Extent
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XII, 259 S.
- Language
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Englisch
- Notes
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graph. Darst.
Zugl.: Hagen, Univ., Diss., 2009
- Keyword
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Siliciumlegierung
Amorpher Zustand
Heteroübergang
PECVD-Verfahren
Heterosolarzelle
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 1:47 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Müller, Thomas
- Logos-Verl.
Time of origin
- 2009
Other Objects (12)
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Plasma-based multifunctional surface modification and laser doping technologies for bifacial PERL/PERC c-Si solar cells with selective emitter
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Passivation of Si Surfaces by PECVD Aluminum Oxide
Speicherung und Reaktivität des Silaethens Me2Si= C(SiMe3)2 [MeSi= CSiMe]
On the formation of blisters in annealed hydrogenated a-Si layers
Electrical and optical analysis of dielectric layers for advanced passivation of BBr3 diffused p+ emitters in n-type c-Si solar cells
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Advances in surface passivation of c-Si solar cells
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Quantitative photoluminescence studies in a-Si:H, c-Si solar cells
Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells
Plasma-based multifunctional surface modification and laser doping technologies for bifacial PERL/PERC c-Si solar cells with selective emitter
Metal surface contamination in c-Si solar cell processing
Untersuchungen am Poly-Si Emitter selbstjustierter VLSI Bipolartransistoren
Passivation of Si Surfaces by PECVD Aluminum Oxide
Speicherung und Reaktivität des Silaethens Me2Si= C(SiMe3)2 [MeSi= CSiMe]
On the formation of blisters in annealed hydrogenated a-Si layers
Electrical and optical analysis of dielectric layers for advanced passivation of BBr3 diffused p+ emitters in n-type c-Si solar cells
Development of a c-Si Photovoltaic Module for Desert Climates
Advances in surface passivation of c-Si solar cells
Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates
Quantitative photoluminescence studies in a-Si:H, c-Si solar cells
Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells
Plasma-based multifunctional surface modification and laser doping technologies for bifacial PERL/PERC c-Si solar cells with selective emitter
Metal surface contamination in c-Si solar cell processing
Untersuchungen am Poly-Si Emitter selbstjustierter VLSI Bipolartransistoren
Passivation of Si Surfaces by PECVD Aluminum Oxide
Speicherung und Reaktivität des Silaethens Me2Si= C(SiMe3)2 [MeSi= CSiMe]
On the formation of blisters in annealed hydrogenated a-Si layers
Electrical and optical analysis of dielectric layers for advanced passivation of BBr3 diffused p+ emitters in n-type c-Si solar cells