Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism ; day:17 ; month:02 ; year:2022 ; extent:10
Advanced electronic materials ; (17.02.2022) (gesamt 10)
- Urheber
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Heisig, Thomas
Lange, Kristof
Gutsche, Alexander
Goß, Kalle Thorben
Hambsch, Sebastian
Locatelli, Andrea
Menteş, Tevfik Onur
Genuzio, Francesca
Menzel, Stephan
Dittmann, Regina
- DOI
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10.1002/aelm.202100936
- URN
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urn:nbn:de:101:1-2022021714354220065138
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:34 MESZ
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Beteiligte
- Heisig, Thomas
- Lange, Kristof
- Gutsche, Alexander
- Goß, Kalle Thorben
- Hambsch, Sebastian
- Locatelli, Andrea
- Menteş, Tevfik Onur
- Genuzio, Francesca
- Menzel, Stephan
- Dittmann, Regina
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