Phosphorous Catalytic‐Doping of Silicon Alloys for the Use in Silicon Heterojunction Solar Cells

Herein, the effectiveness of post‐deposition catalytic‐doping (cat‐doping) on various doped silicon alloys, i.e., microcrystalline silicon (μc‐Si:H), nanocrystalline silicon oxide (nc‐SiOx:H), and microcrystalline silicon carbide (μc‐SiC:H), for the use in silicon heterojunction solar cells is investigated. Phosphorous (P) profiles by secondary ion mass spectrometry (SIMS) reveal the P distribution and its difference in these three silicon alloy films. Conductivity and effective charge carrier lifetime of different samples are found to increase to different extents after cat‐doping process. Coexistence of thermal annealing, hydrogenation, and phosphorus doping is confirmed by using different gases during the cat‐doping process.

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Phosphorous Catalytic‐Doping of Silicon Alloys for the Use in Silicon Heterojunction Solar Cells ; volume:22 ; number:6 ; year:2020 ; extent:5
Advanced engineering materials ; 22, Heft 6 (2020) (gesamt 5)

Creator
Liu, Yong
Pomaska, Manuel
Duan, Weiyuan
Kim, Do Yun
Köhler, Malte
Breuer, Uwe
Ding, Kaining

DOI
10.1002/adem.201900613
URN
urn:nbn:de:101:1-2022061712123018340587
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:32 AM CEST

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Associated

  • Liu, Yong
  • Pomaska, Manuel
  • Duan, Weiyuan
  • Kim, Do Yun
  • Köhler, Malte
  • Breuer, Uwe
  • Ding, Kaining

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