Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2045-2322
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate ; volume:12 ; number:1 ; day:12 ; month:9 ; year:2022 ; pages:1-11 ; date:12.2022
Scientific reports ; 12, Heft 1 (12.9.2022), 1-11, 12.2022

Creator
Fukuda, Keisuke
Miyamoto, Satoru
Nakahara, Masahiro
Suzuki, Shota
Dhamrin, Marwan
Maeda, Kensaku
Fujiwara, Kozo
Uraoka, Yukiharu
Usami, Noritaka
Contributor
SpringerLink (Online service)

DOI
10.1038/s41598-022-19122-7
URN
urn:nbn:de:101:1-2022111721132040891667
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:36 AM CEST

Data provider

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Associated

  • Fukuda, Keisuke
  • Miyamoto, Satoru
  • Nakahara, Masahiro
  • Suzuki, Shota
  • Dhamrin, Marwan
  • Maeda, Kensaku
  • Fujiwara, Kozo
  • Uraoka, Yukiharu
  • Usami, Noritaka
  • SpringerLink (Online service)

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