Hochschulschrift
Determination of key device parameters for short- and long-channel Schottky-type carbon nanotube field-effect transistors
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
Dresden, Technische Universität Dresden, Dissertation, 2019
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
CNTFET
Schottky-Kontakt
Kontaktwiderstand
Ladungsträgerbeweglichkeit
Physikalisches Phänomen
Elektrische Eigenschaft
Simulation
- Ereignis
-
Veröffentlichung
- (wo)
-
Dresden
- (wer)
-
TUD Press
- (wann)
-
2020
- Ereignis
-
Veröffentlichung
- (wo)
-
Dresden
- (wer)
-
Technische Universität Dresden
- (wann)
-
2020
- Urheber
- Beteiligte Personen und Organisationen
-
Schröter, Michael
Maneux, C.
- URN
-
urn:nbn:de:bsz:14-qucosa2-382722
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:36 MESZ
Datenpartner
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Objekttyp
- Hochschulschrift
Beteiligte
- Pacheco-Sánchez, Aníbal Uriel
- Schröter, Michael
- Maneux, C.
- TUD Press
- Technische Universität Dresden
Entstanden
- 2020
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Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications
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Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications
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