Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffraction
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
-
Englisch
- Bibliographic citation
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In: Advanced Electronic Materials, Erscheinungsjahr: 2018, Jahrgang: 4, Heft: 7, Seiten: 1800091-1-1800091-10, E-ISSN: 2199-160X
- Event
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Veröffentlichung
- (where)
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Dresden
- (who)
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Technische Universität Dresden
- (when)
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2022
- Creator
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Park, Min Hyuk
Chung, Ching-Chang
Schenk, Tony
Richter, Claudia
Opsomer, Karl
Detavernier, Christophe
Adelmann, Christoph
Jones, Jacob L.
Mikolajick, Thomas
Schroeder, Uwe
- URN
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urn:nbn:de:bsz:14-qucosa2-804990
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:52 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Park, Min Hyuk
- Chung, Ching-Chang
- Schenk, Tony
- Richter, Claudia
- Opsomer, Karl
- Detavernier, Christophe
- Adelmann, Christoph
- Jones, Jacob L.
- Mikolajick, Thomas
- Schroeder, Uwe
- Technische Universität Dresden
Time of origin
- 2022
Other Objects (12)
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Material perspectives of HfO₂-based ferroelectric films for device applications
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Investigating the dynamics of polarization reversal in ferroelectric thin films by time-resolved X-ray diffraction
Materials Testing - X-Ray Diffraction
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering - CORRECTION
From X-ray diffraction data annealing to comprehensive charge density analysis
X-ray diffraction topography
X-ray diffraction analysis
Interplay between ferroelectric and resistive switching in doped crystalline HfO₂
Material perspectives of HfO₂-based ferroelectric films for device applications
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Investigating the dynamics of polarization reversal in ferroelectric thin films by time-resolved X-ray diffraction
Materials Testing - X-Ray Diffraction
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering - CORRECTION
From X-ray diffraction data annealing to comprehensive charge density analysis
X-ray diffraction topography
X-ray diffraction analysis
Interplay between ferroelectric and resistive switching in doped crystalline HfO₂
Material perspectives of HfO₂-based ferroelectric films for device applications
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Investigating the dynamics of polarization reversal in ferroelectric thin films by time-resolved X-ray diffraction
Materials Testing - X-Ray Diffraction
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications