Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffraction
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Advanced Electronic Materials, Erscheinungsjahr: 2018, Jahrgang: 4, Heft: 7, Seiten: 1800091-1-1800091-10, E-ISSN: 2199-160X
- Ereignis
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Veröffentlichung
- (wo)
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Dresden
- (wer)
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Technische Universität Dresden
- (wann)
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2022
- Urheber
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Park, Min Hyuk
Chung, Ching-Chang
Schenk, Tony
Richter, Claudia
Opsomer, Karl
Detavernier, Christophe
Adelmann, Christoph
Jones, Jacob L.
Mikolajick, Thomas
Schroeder, Uwe
- URN
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urn:nbn:de:bsz:14-qucosa2-804990
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:52 MEZ
Datenpartner
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Beteiligte
- Park, Min Hyuk
- Chung, Ching-Chang
- Schenk, Tony
- Richter, Claudia
- Opsomer, Karl
- Detavernier, Christophe
- Adelmann, Christoph
- Jones, Jacob L.
- Mikolajick, Thomas
- Schroeder, Uwe
- Technische Universität Dresden
Entstanden
- 2022
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