Emergence of electric-field-tunable interfacial ferromagnetism in 2D antiferromagnet heterostructures
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
2041-1723
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Emergence of electric-field-tunable interfacial ferromagnetism in 2D antiferromagnet heterostructures ; volume:13 ; number:1 ; day:15 ; month:12 ; year:2022 ; pages:1-6 ; date:12.2022
Nature Communications ; 13, Heft 1 (15.12.2022), 1-6, 12.2022
- Urheber
-
Cheng, Guanghui
Rahman, Mohammad Mushfiqur
He, Zhiping
Allcca, Andres Llacsahuanga
Rustagi, Avinash
Stampe, Kirstine Aggerbeck
Zhu, Yanglin
Yan, Shaohua
Tian, Shangjie
Mao, Zhiqiang
Lei, Hechang
Watanabe, Kenji
Taniguchi, Takashi
Upadhyaya, Pramey
Chen, Yong P.
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1038/s41467-022-34812-6
- URN
-
urn:nbn:de:101:1-2023020921545900469810
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:48 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Cheng, Guanghui
- Rahman, Mohammad Mushfiqur
- He, Zhiping
- Allcca, Andres Llacsahuanga
- Rustagi, Avinash
- Stampe, Kirstine Aggerbeck
- Zhu, Yanglin
- Yan, Shaohua
- Tian, Shangjie
- Mao, Zhiqiang
- Lei, Hechang
- Watanabe, Kenji
- Taniguchi, Takashi
- Upadhyaya, Pramey
- Chen, Yong P.
- SpringerLink (Online service)
Ähnliche Objekte (12)
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
Layer-polarized ferromagnetism in rhombohedral multilayer graphene
Tailoring the dielectric screening in WS2–graphene heterostructures
Quantum Transport and Spectroscopy of 2D Perovskite/Graphene Heterostructures
Temperature‐Dependent Adhesion in van der Waals Heterostructures
A ballistic graphene superconducting microwave circuit
MoS2 photodetectors integrated with photonic circuits
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Insulating State in Low‐Disorder Graphene Nanoribbons
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
Layer-polarized ferromagnetism in rhombohedral multilayer graphene
Tailoring the dielectric screening in WS2–graphene heterostructures
Quantum Transport and Spectroscopy of 2D Perovskite/Graphene Heterostructures
Temperature‐Dependent Adhesion in van der Waals Heterostructures
A ballistic graphene superconducting microwave circuit
MoS2 photodetectors integrated with photonic circuits
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Insulating State in Low‐Disorder Graphene Nanoribbons
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
Layer-polarized ferromagnetism in rhombohedral multilayer graphene
Tailoring the dielectric screening in WS2–graphene heterostructures
Quantum Transport and Spectroscopy of 2D Perovskite/Graphene Heterostructures
Temperature‐Dependent Adhesion in van der Waals Heterostructures
A ballistic graphene superconducting microwave circuit
MoS2 photodetectors integrated with photonic circuits
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices