Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN ; volume:11 ; number:1 ; day:18 ; month:11 ; year:2016 ; pages:1-6 ; date:12.2016
Nanoscale research letters ; 11, Heft 1 (18.11.2016), 1-6, 12.2016

Creator
Yang, Fann-Wei
Contributor
Chen, Yu-Yu
Feng, Shih-Wei
Sun, Qian
Han, Jung
SpringerLink (Online service)

DOI
10.1186/s11671-016-1727-8
URN
urn:nbn:de:1111-201612098683
Rights
Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:51 AM CEST

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Associated

  • Yang, Fann-Wei
  • Chen, Yu-Yu
  • Feng, Shih-Wei
  • Sun, Qian
  • Han, Jung
  • SpringerLink (Online service)

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