Epitaxial La 0.5 Sr 0.5 MnO 3‐δ Bipolar Memristive Devices with Tunable and Stable Multilevel States
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Epitaxial La 0.5 Sr 0.5 MnO 3‐δ Bipolar Memristive Devices with Tunable and Stable Multilevel States ; day:18 ; month:04 ; year:2023 ; extent:9
Advanced materials interfaces ; (18.04.2023) (gesamt 9)
- Creator
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Moncasi, Carlos
Lefèvre, Gauthier
Villeger, Quentin
Rapenne, Laetitia
Khuu, Thoai‐Khanh
Wilhelm, Fabrice
Rogalev, Andrei
Jiménez, Carmen
Burriel, Mónica
- DOI
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10.1002/admi.202202496
- URN
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urn:nbn:de:101:1-2023041915153336494819
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:51 AM CEST
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Associated
- Moncasi, Carlos
- Lefèvre, Gauthier
- Villeger, Quentin
- Rapenne, Laetitia
- Khuu, Thoai‐Khanh
- Wilhelm, Fabrice
- Rogalev, Andrei
- Jiménez, Carmen
- Burriel, Mónica
Other Objects (12)
Structural Defects Improve the Memristive Characteristics of Epitaxial La 0.8 Sr 0.2 MnO 3 ‐Based Devices
Tailoring c ‐Axis Orientation in Epitaxial Ruddlesden–Popper Pr 0.5 Ca 1.5 MnO 4 Films
Optimizing the Ferroelectric Performance of Hf 0.5 Zr 0.5 O 2 Epitaxial Film by La 0.67 Sr 0.33 MnO 3 Capping Layer
Oxygen Plasma‐Induced Modification of Structural and Electrical Properties of Pr 0.5 Sr 0.5 MnO 3 Manganites
Trade-off between variability and retention of memristive epitaxial SrTiO_3 devices
Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices
05/2251; 05/2243; 05/2242; 05/2244; 05/2245; 05/1704; 05/2209; 05/0081
Chemischer Transport von Mn2O3, Mn3O4 [MnO, MnO] und MnO unter Koexistenzbedingungen und Bestimmung ihrer Phasenbreite
Metal–Insulator Transition via Ion Irradiation in Epitaxial La 0.7 Sr 0.3 MnO 3− δ Thin Films
05/2242; 05/2243; 05/0644; 05/2245; 02/031; 02/0153; 05/2254; 05/1313; 05/1207
05/4, 05/5, 05/9, 05/13/61
1903/05/05
Structural Defects Improve the Memristive Characteristics of Epitaxial La 0.8 Sr 0.2 MnO 3 ‐Based Devices
Tailoring c ‐Axis Orientation in Epitaxial Ruddlesden–Popper Pr 0.5 Ca 1.5 MnO 4 Films
Optimizing the Ferroelectric Performance of Hf 0.5 Zr 0.5 O 2 Epitaxial Film by La 0.67 Sr 0.33 MnO 3 Capping Layer
Oxygen Plasma‐Induced Modification of Structural and Electrical Properties of Pr 0.5 Sr 0.5 MnO 3 Manganites
Trade-off between variability and retention of memristive epitaxial SrTiO_3 devices
Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices
05/2251; 05/2243; 05/2242; 05/2244; 05/2245; 05/1704; 05/2209; 05/0081
Chemischer Transport von Mn2O3, Mn3O4 [MnO, MnO] und MnO unter Koexistenzbedingungen und Bestimmung ihrer Phasenbreite
Metal–Insulator Transition via Ion Irradiation in Epitaxial La 0.7 Sr 0.3 MnO 3− δ Thin Films
05/2242; 05/2243; 05/0644; 05/2245; 02/031; 02/0153; 05/2254; 05/1313; 05/1207
05/4, 05/5, 05/9, 05/13/61
1903/05/05
Structural Defects Improve the Memristive Characteristics of Epitaxial La 0.8 Sr 0.2 MnO 3 ‐Based Devices
Tailoring c ‐Axis Orientation in Epitaxial Ruddlesden–Popper Pr 0.5 Ca 1.5 MnO 4 Films
Optimizing the Ferroelectric Performance of Hf 0.5 Zr 0.5 O 2 Epitaxial Film by La 0.67 Sr 0.33 MnO 3 Capping Layer
Oxygen Plasma‐Induced Modification of Structural and Electrical Properties of Pr 0.5 Sr 0.5 MnO 3 Manganites
Trade-off between variability and retention of memristive epitaxial SrTiO_3 devices
Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices
05/2251; 05/2243; 05/2242; 05/2244; 05/2245; 05/1704; 05/2209; 05/0081
Chemischer Transport von Mn2O3, Mn3O4 [MnO, MnO] und MnO unter Koexistenzbedingungen und Bestimmung ihrer Phasenbreite
Metal–Insulator Transition via Ion Irradiation in Epitaxial La 0.7 Sr 0.3 MnO 3− δ Thin Films
05/2242; 05/2243; 05/0644; 05/2245; 02/031; 02/0153; 05/2254; 05/1313; 05/1207
05/4, 05/5, 05/9, 05/13/61