Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces ; volume:6 ; number:1 ; day:31 ; month:10 ; year:2023 ; pages:1-11 ; date:12.2023
Communications Physics ; 6, Heft 1 (31.10.2023), 1-11, 12.2023
- Creator
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Hori, Masahiro
Kume, Jinya
Razanoelina, Manjakavahoaka
Kageshima, Hiroyuki
Ono, Yukinori
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s42005-023-01428-1
- URN
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urn:nbn:de:101:1-2024011514025220980291
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:20 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Hori, Masahiro
- Kume, Jinya
- Razanoelina, Manjakavahoaka
- Kageshima, Hiroyuki
- Ono, Yukinori
- SpringerLink (Online service)
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