- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
2662-4443
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Large mobility modulation in ultrathin amorphous titanium oxide transistors ; volume:1 ; number:1 ; day:3 ; month:12 ; year:2020 ; pages:1-8 ; date:12.2020
Communications materials ; 1, Heft 1 (3.12.2020), 1-8, 12.2020
- Urheber
-
Tiwale, Nikhil
Subramanian, Ashwanth
Dai, Zhongwei
Sikder, Sayantani
Sadowski, Jerzy T.
Nam, Chang-Yong
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1038/s43246-020-00096-w
- URN
-
urn:nbn:de:101:1-2021010719001699413115
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:21 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Tiwale, Nikhil
- Subramanian, Ashwanth
- Dai, Zhongwei
- Sikder, Sayantani
- Sadowski, Jerzy T.
- Nam, Chang-Yong
- SpringerLink (Online service)
Ähnliche Objekte (12)
Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film
Large‐Area Processable Ultrathin Organic Transistors with High Mobility and Mechanical Stabilities
All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride
Review—Extremely Thin Amorphous Indium Oxide Transistors
Ferromagnetism in ultrathin MoS2 nanosheets: from amorphous to crystalline
Inflammatory cell response to ultra-thin amorphous and crystalline hydroxyapatite surfaces
Electrical Interface Characterization of Ultrathin Amorphous Silicon Layers on Crystalline Silicon
Endothelialization of TiO2 Nanorods Coated with Ultrathin Amorphous Carbon Films
Selenium-alloyed tellurium oxide for amorphous p-channel transistors
Light Effect on Amorphous Tin Oxide Thin‐Film Transistors
Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes
Ultrathin quasi-2D amorphous carbon dielectric prepared from solution precursor for nanoelectronics
Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film
Large‐Area Processable Ultrathin Organic Transistors with High Mobility and Mechanical Stabilities
All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride
Review—Extremely Thin Amorphous Indium Oxide Transistors
Ferromagnetism in ultrathin MoS2 nanosheets: from amorphous to crystalline
Inflammatory cell response to ultra-thin amorphous and crystalline hydroxyapatite surfaces
Electrical Interface Characterization of Ultrathin Amorphous Silicon Layers on Crystalline Silicon
Endothelialization of TiO2 Nanorods Coated with Ultrathin Amorphous Carbon Films
Selenium-alloyed tellurium oxide for amorphous p-channel transistors
Light Effect on Amorphous Tin Oxide Thin‐Film Transistors
Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes
Ultrathin quasi-2D amorphous carbon dielectric prepared from solution precursor for nanoelectronics
Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film
Large‐Area Processable Ultrathin Organic Transistors with High Mobility and Mechanical Stabilities
All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride
Review—Extremely Thin Amorphous Indium Oxide Transistors
Ferromagnetism in ultrathin MoS2 nanosheets: from amorphous to crystalline
Inflammatory cell response to ultra-thin amorphous and crystalline hydroxyapatite surfaces
Electrical Interface Characterization of Ultrathin Amorphous Silicon Layers on Crystalline Silicon
Endothelialization of TiO2 Nanorods Coated with Ultrathin Amorphous Carbon Films
Selenium-alloyed tellurium oxide for amorphous p-channel transistors
Light Effect on Amorphous Tin Oxide Thin‐Film Transistors
Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes