Tuning of power factor in bismuth selenide through Sn/Te co doping for low temperature thermoelectric applications
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Tuning of power factor in bismuth selenide through Sn/Te co doping for low temperature thermoelectric applications ; volume:130 ; number:7 ; day:25 ; month:6 ; year:2024 ; pages:1-12 ; date:7.2024
Applied physics / A. A, Materials science & processing ; 130, Heft 7 (25.6.2024), 1-12, 7.2024
- Urheber
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Hegde, Ganesh Shridhar
Prabhu, Ashwatha Narayana
Nayak, Ramakrishna
Yang, C. F.
Kuo, Y. K.
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1007/s00339-024-07653-x
- URN
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urn:nbn:de:101:1-2410132131301.054361351982
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 15.08.2025, 07:31 MESZ
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Beteiligte
- Hegde, Ganesh Shridhar
- Prabhu, Ashwatha Narayana
- Nayak, Ramakrishna
- Yang, C. F.
- Kuo, Y. K.
- SpringerLink (Online service)
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Reduction in thermal conductivity and electrical resistivity of indium and tellurium co-doped bismuth selenide thermoelectric system
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Manganese Doping Promotes the Synthesis of Bismuth‐based Perovskite Nanocrystals While Tuning Their Band Structures
Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy
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